unisonic technologies co., ltd ulb4132 preliminary power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2011 unisonic technologies co., ltd qw-r502-678.a 100a, 30v n-channel power mosfet ? description the ulb4132 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for use as a load switch or in pwm applications. ? features * r ds(on) =3.05m ? @ v gs =10v, i d =50a * r ds(on) = 4.2m ? @ v gs =4.5v, i d =40a ? symbol 1 .gate 2.drain 3.source ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 ulb4132l-ta3-t ULB4132G-TA3-T to-220 g d s tube note: pin assignment: g: gate d: drain s: source
ulb4132 preliminary power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-678.a ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v drain current continuous i d 78 a pulsed i dm 620 a single pulsed avalanche energy e as 310 mj single pulsed avalanche current i as 35 a power dissipation p d 83 w junction temperature t j +150 c strong temperature t stg -55 ~ +150 c note: 1. absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case jc 1.5 c/w ? electrical characteristics (t j =25c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0 v, i d =250 a 30 v drain-source leakage current i dss v ds =30 v,v gs =0 v 1 a gate-source leakage current i gss v ds =0 v, v gs = 20 v 100 na gate-source leakage current forward i gss v gs =+20v, v ds =0v +100 na reverse v gs =-20v, v ds =0v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =100 a 1.35 1.8 2.35 v static drain-source on-resistance r ds(on) v gs =10 v, i d =50 a 3.05 5.3 m ? v gs =4.5 v, i d =40 a 4.2 8 dynamic parameters input capacitance c iss v ds =15v, v gs =0v, f=1.0mhz 5110 pf output capacitance c oss 960 reverse transfer capacitance c rss 440 switching parameters total gate charge q g v ds =15v, i d =32a, i g =3.33ma, v gs =5v 36 54 nc gate source charge q gs 9.1 gate drain charge q gd 13 turn-on delay time t d ( on ) v dd =15v, i d =32a, r g =1.8 ? v gs =10 v 23 ns turn-on rise time t r 95 turn-off delay time t d ( off ) 25 turn-off fall-time t f 36 source- drain diode ratings and characteristics maximum body-diode continuous current i s 150 a maximum body-diode pulsed current i sm 620 a drain-source diode forward voltage v sd i s =32 a,v gs =0 v 1 v
ulb4132 preliminary power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-678.a ? test circuit and waveform
ulb4132 preliminary power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-678.a ? typical characteristics 50 40 30 20 10 0 01 2 345 4 3 2 1 0 0 20 40 60 80 100 v gs =10,8,6,4v v gs =3v 25 t j =125 -55 output characteristics drain current,i d (a) drain to source voltage,v ds (v) drain current,i d (a) transfer characteristics gate to source voltage,v gs (v) normalized gate-source threshold voltage,v th normalized on-resistance, r ds(on) (ohms)
ulb4132 preliminary power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-678.a ? typical characteristics(cont.) v gs =0v 10 2 10 1 10 0 0.40.6 0.81.01.2 1.4 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 drain current,i d (a) drain to source voltage,v ds (v) maximum safe operating area r ds(on) limited 100 s 1ms 10ms dc t c =25 t j =150 single pulse source-drain current,i s (a) body diode forward voltage,v sd (v) body-diode characteristics 10 0 10 -1 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 p dm t 1 t 2 square wave pulse duration (sec) normalized thermal transient impedanc curve normalized effective transient thermal impedance,r(t) d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 1.r jc (t)=r(t)*r jc 2.r jc =see datasheet 3.t jm -t c =p*r jc (t) 4.duty cycle,d=t 1 /t 2 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
